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| Composite Transistors NP061A3 Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 6 0.12+0.03 -0.02 5 4 0.800.05 1.000.05 Features * SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half * Maximum package height (0.4 mm) contributes to develop thinner equipments 1 2 1.000.05 3 0 to 0.02 (0.35) (0.35) Display at No.1 lead * UNR11A3 x 2 elements Absolute Maximum Ratings Ta = 25C Parameter Rating of element Overall Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -80 125 125 -55 to +125 Unit V V mA mW C C 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) 0.37+0.03 -0.02 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 1P Internal Connection 6 5 4 Note) *: Measuring on substrate at 17 mm x 10 mm x 1 mm Tr1 Tr2 Electrical Characteristics Ta = 25C 3C Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio hFE Ratio * 1 2 3 Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k Min -50 -50 Typ Max Unit V V - 0.1 - 0.5 - 0.1 80 0.5 -4.9 - 0.2 -30% 0.8 47 1.0 80 +30% 1.2 0.99 - 0.25 A mA V V V k MHz IEBO hFE hFE(Small/Large) VCE(sat) VOH VOL R1 R1 / R2 fT Collector to emitter saturation voltage High level output voltage Low level output voltage Input resistance Resistance ratio Gain bandwidth product Note) *: Ratio between one and another VCB = -10 V, IE = 1 mA, f = 200 MHz (0.10) Basic Part Number of Element 0.10 0.10 Publication date: July 2002 SJJ00258AED 1 NP061A3 PT Ta 140 120 100 80 60 40 20 0 -90 Ta = 25C -80 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA IC VCE -1 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Total power dissipation PT (mW) Collector current IC (mA) -70 -60 -50 -40 -30 -20 -10 - 0.1 Ta = 85C -25C 25C - 0.1 mA IC / IB = 10 -1 -10 -100 0 20 40 60 80 100 120 140 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE IC 180 VCE = -10 V 10 Cob VCB Collector output capacitance Cob (pF) f = 1 MHz Ta = 25C -10 IO VIN VO = -5 V Ta = 25C 160 Forward current transfer ratio hFE 140 Ta = 85C 120 100 80 60 40 20 0 - 0.1 -1 -10 -100 25C Output current IO (mA) 1 -5 -10 -15 -20 -25 -30 -35 -40 -1 -25C - 0.1 0 - 0.01 0 - 0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Collector current IC (mA) Collector to base voltage VCB (V) Input voltage VIN (V) VIN IO -10 VO = -5 V Ta = 25C Output current IO (mA) -1 - 0.1 - 0.01 0 - 0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Input voltage VIN (V) 2 SJJ00258AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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